Integrated Circuit Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Quick Detail:

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Description:

The K4M513233C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications

Applications:

?? 3.0V & 3.3V power supply.

?? LVCMOS compatible with multiplexed address.

?? Four banks operation.

?? MRS cycle with address key programs.

???? -. CAS latency (1, 2 & 3).

???? -. Burst length (1, 2, 4, 8 & Full page).

???? -. Burst type (Sequential & Interleave).

?? EMRS cycle with address key programs.

?? All inputs are sampled at the positive going edge of the system

??? clock.

?? Burst read single-bit write operation.

?? Special Function Support.

???? -. PASR (Partial Array Self Refresh).

???? -. Internal TCSR (Temperature Compensated Self Refresh)???

??? DQM for masking.

?? Auto refresh.

?? 64ms refresh period (8K cycle).

?? Commercial Temperature Operation (-25°C ~ 70°C).

?? Extended Temperature Operation (-25°C ~ 85°C).

?? 90Balls FBGA

Specifications:

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Tag:

K4M513233C-DN75 16Mx32BIT